BD139

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NPN Silicon Transistor General Purpose

3.00 EGP 3.0 EGP 3.00 EGP

3.00 EGP

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Internal Reference: BD139

Features

  • Collector-Emitter Volt (Vceo): 80V
  • Collector-Base Volt (Vcbo): 100V
  • Collector Current (Ic): 1.5A
  • hfe: 40-250 @ 150mA
  • Power Dissipation (Ptot): 8W
  • Type: NPN

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